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HMS1M32M8L

Features: · Part identification- HMS1M32M8L : SIMM design- HMS1M32Z8L : ZIP designThe both are Pin to Pin Compatible· Access times : 55ns, 70ns· High-density 4MByte design· High-reliability, low-power design· Single + 5V ±0.5V power supply· Low data retention voltage : 2V(min)w Three state output ...

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SeekIC No. : 004364810 Detail

HMS1M32M8L: Features: · Part identification- HMS1M32M8L : SIMM design- HMS1M32Z8L : ZIP designThe both are Pin to Pin Compatible· Access times : 55ns, 70ns· High-density 4MByte design· High-reliability, low-pow...

HMS1M32M8L Data Sheet

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Part Number:
HMS1M32M8L
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

· Part identification
- HMS1M32M8L : SIMM design
- HMS1M32Z8L : ZIP design
The both are Pin to Pin Compatible
· Access times : 55ns, 70ns
· High-density 4MByte design
· High-reliability, low-power design
· Single + 5V ±0.5V power supply
· Low data retention voltage : 2V(min)
w Three state output and TTL-compatible
w FR4-PCB design
w Low profile 72-Pin SIMM




Specifications

Voltage on Any Pin Relative to Vss VIN,OUT .......-0.5V to +7.0V
Voltage on Vcc Supply Relative to Vss VCC........ -0.5V to +7.0V
Power Dissipation PD.......................................................... 8W
Storage Temperature TSTG .............................-65 to +150
Operating Temperature TA ...................................0 to +70




Description

The HMS1M32M8L is a static random access memory (SRAM) module containing 1,048,576 bits organized in a x32-bit configuration. The module consists of eight 512K x 8 SRAMs mounted on a 72-pin, double-sided, FR4-printed circuit board.

The HMS1M32M8L also support low data retention voltage for battery back-up operations with low data retention current. Eightchip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to enable the module's 4M bytes independently. Output enable(/OE) and write enable(/WE) can set the memory input and output.Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.

For reliability, this SRAM module HMS1M32M8L/Z8 is designed as multiple power and ground pin. All module components may be powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.






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