HMS1M32M8G/Z8

Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

    The HMS1M32M8G/Z8 is a high-speed static random access memory (SRAM) module containing 1,048,576 words organized  in a x32-bit configuration. The module consists of eight 1M x 4 SRAMs mounted on a 72-pin, double-sided, FR4-printed circuit board.

PD0 to PD3 identify the module's density allowing interchangeable use of alternate density, industry- standard modules. Eight chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module's 4 bytes independently. Output enable(/OE)  and  write enable(/WE)  can set the memory input and output. Data is written into the SRAM memory HMS1M32M8G/Z8 when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.