Features: · Access times : 70 and 100ns· High-density 1MByte design· High-reliability, high-speed design· Single + 3.3V ±0.3V power supply· Easy memory expansion with /CE and /OE functions· All inputs and outputs are TTL-compatible· FR4-PCB designSpecifications PARAMETER SYMBOL RATING Vo...
HMS12864F8VL: Features: · Access times : 70 and 100ns· High-density 1MByte design· High-reliability, high-speed design· Single + 3.3V ±0.3V power supply· Easy memory expansion with /CE and /OE functions· All inpu...
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PARAMETER | SYMBOL | RATING |
Voltage on Any Pin Relative to Vss | VIN,OUT | -0.5V to 4.6V |
Voltage on Vcc Supply Relative to Vss | VCC,VCCQ | -0.3V to 4.6V |
Power Dissipation | PD | 8W |
Storage Temperature | TSTG | -55°C to +150°C |
Operating Temperature | IA | 0oC to +70oC |
The HMS12864F8VL is a high-speed static random access memory (SRAM) module containing 131,072 words organized in a x 64-bit configuration. The module consists of eight 128K x 8 SRAMs mounted on a 120-pin, both-sided, FR4-printed circuit board.
Byte write enable inputs,(/WE0,/WE1,/WE2,/WE3,/WE4,/WE5,/WE6,/WE7) are used to enable the module HMS12864F8VL's 8 bits independently. Output enable(/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module HMS12864F8VL is designed as multiple power and ground pin. All module components may be powered from a single +3.3V DC power supply and all inputs and outputs are fully TTL-compatible.