Features: Access times : 12, 15 and 20ns High-density 1MByte design High-reliability, high-speed design Single + 3.3V ±0.3V power supply Easy memory expansion with /CE and /OE functions All inputs and outputs are TTL-compatible Industry-standard pin-outFR4-PCB designSpecifications PARAMETER ...
HMS12864F8V: Features: Access times : 12, 15 and 20ns High-density 1MByte design High-reliability, high-speed design Single + 3.3V ±0.3V power supply Easy memory expansion with /CE and /OE functions All inputs ...
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PARAMETER |
SYMBOL |
RATING |
Voltage on Any Pin Relative to Vss |
VIN,OUT |
-0.5V to +4.6V |
Voltage on Vcc Supply Relative to Vss |
VCC |
-0.5V to +4.6V |
Power Dissipation |
PD |
8.0W |
Storage Temperature |
TSTG |
-65 to +150 |
Operating Temperature |
TA |
0to +70 |
The HMS12864F8V is a high-speed static random access memory (SRAM) module containing 131,072 words rganized in a x 64-bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 120-pin, both-sided, FR4-printed circuit board.
Byte write enable inputs,(/WE0,/WE1,/WE2,/WE3,/WE4,/WE5,/WE6,/WE7) are used to enable the module HMS12864F8V 's 8 bits
independently. Output enable(/OE) and write enable(/WE) can set the memory input and output.
Data is written into the SRAM memory HMS12864F8V when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module is designed as multiple power and ground pin. All module components may beowered from a single +3.3V DC power supply and all inputs and outputs are fully TTL-compatible.