HMS12832M4V

·Access times : 8, 10, 12, 15 and 20ns
·High-density 512KByte design
·High-reliability, high-speed design
·Single + 3.3V ±0.3V power supply
·Easy memory expansion with /CE and /OE functions
·All inputs and outputs are TTL-compatible
·Industry-standard pinout
·FR4-PCB design

The HMS12832M4V is a high-speed static random access memory (SRAM) module containing 131,072 words organized in a x32-bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 64-pin, single-sided, FR4-printed circuit board.

PD0 and PD1 identify the module HMS12832M4V's density allowing interchangeable use of alternate density, industry- standard modules. Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module's 4 bytes independently. Output enable(/OE) and write enable(/WE) can set the memory input and output.

Data is written into the SRAM memory HMS12832M4V when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.

For reliability, this SRAM module HMS12832M4V is designed as multiple power and ground pin. All module components may be powered from a single +3.3V DC power supply and all inputs and outputs are fully TTL-compatible.