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HMS12832M4G

Features: · Access times : 10, 12, 15 and 20ns· High-density 512KByte design· High-reliability, high-speed design· Single + 5V ±0.5V power supply· Easy memory expansion with /CE and /OE functions· All inputs and outputs are TTL-compatible· Industry-standard pinout· FR4-PCB designSpecifications ...

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SeekIC No. : 004364798 Detail

HMS12832M4G: Features: · Access times : 10, 12, 15 and 20ns· High-density 512KByte design· High-reliability, high-speed design· Single + 5V ±0.5V power supply· Easy memory expansion with /CE and /OE functions· A...

HMS12832M4G Data Sheet

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Part Number:
HMS12832M4G
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Access times : 10, 12, 15 and 20ns
· High-density 512KByte design
· High-reliability, high-speed design
· Single + 5V ±0.5V power supply
· Easy memory expansion with /CE and /OE functions
· All inputs and outputs are TTL-compatible
· Industry-standard pinout
· FR4-PCB design




Specifications

PARAMETER SYMBOL RATING
Voltage on Any Pin Relative to Vss VIN,OUT -0.5V to Vcc+0.5V
Voltage on Vcc Supply Relative to Vss VCC -0.5V to +7.0V
Power Dissipation PD 4.0W
Storage Temperature TSTG -65 to +150
Operating Temperature TA 0 to +70





Description

The HMS12832M4G/Z4 is a high-speed static random access memory (SRAM) module containing 131,072 words organized in a x32-bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 64-pin, single-sided, FR4-printed circuit board.

PD0 and PD1 identify the module HMS12832M4G's density allowing interchangeable use of alternate density, industry- standard modules. Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module's 4 bytes independently. Output enable(/OE) and write enable(/WE) can set the memory input and output.

Data is written into the SRAM memory HMS12832M4G when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.

For reliability, this SRAM module HMS12832M4G is designed as multiple power and ground pin. All module components may be powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.






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