Features: · Access times : 12, 15 and 20ns· High-density 512KByte design· High-reliability, high-speed design· Single + 5V ±0.5V power supply· Easy memory expansion with /CE and /OE functions· All inputs and outputs are TTL-compatible· Industry-standard pinout· FR4-PCB designPinoutSpecifications ...
HMS12832M4: Features: · Access times : 12, 15 and 20ns· High-density 512KByte design· High-reliability, high-speed design· Single + 5V ±0.5V power supply· Easy memory expansion with /CE and /OE functions· All i...
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Parameter | Symbol | Value |
Voltage on any pin relative to VSS | VIN,OUT | -0.5V to Vcc+0.5V |
Voltage on VCC supply relative to VSS | VCC | -0.5V to +7.0V |
Power Dissipation | PD | -0.5V to +7.0V |
Storage Temperature | TSTG | -65 to +150 |
Operating Temperature | TA | 0 to +70 |
The HMS12832M4 is a high-speed static random access memory (SRAM) module containing 131,072 words organized in a x32-bit configuration
The module HMS12832M4 consists of four 128K x 8 SRAMs mounted on a 64-pin, singlesided, FR4-printed circuit board. PD0 and PD1 identify the module's density allowing interchangeable use of alternate density, industry- standard modules. Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module's 4 bytes independently. Output enable(/OE) and write enable(/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module HMS12832M4 is designed as multiple power and ground pin. All module components may be powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.