HMN4M8DV(N)

The HMN4M8DV(N) Nonvolatile SRAM is a 33,554,432-bit static RAM organized as 4,194,304 bytes by 8 bits. The HMN4M8DV has a self-contained lithium energy source provide reliable non -volatility coupled with the unlimited write cycles of standard SRAM and integral control circuitry which constantly monitors the single 3.3V supply for an out-oftolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the memory until after V_CC returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is switched on to sustain the memory until after V_CC returns valid.

The HMN4M8DV(N) uses extremely low standby current CMOS SRAM's, coupled with small lithium coin cells to provide non - volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.