HMN328D

Features: · Access time : 70, 85, , 120, 150 ns· High-density design : 256Kbit Design· Battery internally isolated until power is applied· Industry-standard 28-pin 32K x 8 pinout· Unlimited write cycles· Data retention in the absence of VCC· 10-years minimum data retention in absence of power· Aut...

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HMN328D Picture
SeekIC No. : 004364740 Detail

HMN328D: Features: · Access time : 70, 85, , 120, 150 ns· High-density design : 256Kbit Design· Battery internally isolated until power is applied· Industry-standard 28-pin 32K x 8 pinout· Unlimited write cy...

floor Price/Ceiling Price

Part Number:
HMN328D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/31

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Product Details

Description



Features:

· Access time : 70, 85, , 120, 150 ns
· High-density design : 256Kbit Design
· Battery internally isolated until power is applied
· Industry-standard 28-pin 32K x 8 pinout
· Unlimited write cycles
· Data retention in the absence of VCC
· 10-years minimum data retention in absence of power
· Automatic write-protection during power-up/power-down cycles
· Data is automatically protected during power loss
· Industrial temperature operation



Pinout

  Connection Diagram


Specifications

PARAMETER
SYMBOL
RATING
CONDITIONS
DC voltage applied on VCC relative to VSS
VCC
-0.3V to 7.0V
DC Voltage applied on any pin excluding VCC
relative to VSS
VT
-0.3V to 7.0V
VT VCC+0.3
Operating temperature
TOPR
0 to 70
Commercial
-40 to 85
Industrial
Storage temperature
TSTG
-55 to 125
Temperature under bias
TBIAS
-40 to 85
Soldering temperature
TSOLDER
260
For 10 second

NOTE: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the Recommended DC Operating Conditions detailed in this data sheet. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.




Description

The HMN328D nonvolatile SRAM is a 262,144-bit static RAM organized as 32,768 bytes by 8 bits.  The HMN328D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited  rite cycles of standard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out- ftolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the memory until after VCC returns valid and write protection is unconditionally enabled to prevent garbled data. In  ddition the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy  ource is switched on to sustain the memory until after VCC returns valid.

The HMN328D uses extremely low standby current CMOS SRAM's, coupled with small lithium coin cells to provide  onvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM.




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