DescriptionThe HMJE13005-B3 belongs to the HMJE13005 series. It is a kind of NPN epitaxial planar silicon transistor which is made by the MICROELECTRONICS CORP. It is available in the TO-220 package. It can be used in switch regulators,PWM inverters and motor controls,solenoid and relay drivers an...
HMJE13005-B3: DescriptionThe HMJE13005-B3 belongs to the HMJE13005 series. It is a kind of NPN epitaxial planar silicon transistor which is made by the MICROELECTRONICS CORP. It is available in the TO-220 package...
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Features: • VCEO(sus)=400V• Reverse Bias SOA with Inductive Loads @TC=100• Induc...
Specifications• Maximum TemperaturesStorage Temperature .......................................
The HMJE13005-B3 belongs to the HMJE13005 series. It is a kind of NPN epitaxial planar silicon transistor which is made by the MICROELECTRONICS CORP. It is available in the TO-220 package. It can be used in switch regulators,PWM inverters and motor controls,solenoid and relay drivers and deflection circuits.
The following is the description about HMJE13005-B3's absolute maximum ratings at TA is 25 . (1): storage temperature is from -55 to 150 and the maximum junction temperature is 150 ; (2): total power dissipation is 75 W when TC is 25 ; (3): collector to emitter voltage(VCEX) is 700 V and collector to emitter voltage(VCEO) is 400 V,emitter to base voltage(VEBO) is 9 V; (4): IC collector current is 4 A and IB base current is 2 A; (5): the minimum BVCEX is 700 V when IC is 1 mA and VEB is 1.5 V ; (6): the minimum BVCEO is 400 V when IC is 10 mA ; (7): the maximum IEBO is 1 mA when VEB is 9 V,ICEX is 1 mA at VCE is 700 V and VBE is 1.5 V; (8): the maximum VCE(sat) is 500 mV at the condition of IC is 1 A and IB is 200 mA; (9): the typical ton is 0.6 s and the maximum is 0.8 s ,the typical ts is 2.9 s and the maximum is 4 s when VCC is 125 V,IC is 2 A and IB1 is 0.4 A. If you want to know more information about the HMJE13005-B3 ,please download the datasheet at www.seekic.com.