HMF8M16F8V

Features: · Part identification- HMF8M16F8V(Bottom boot block configuration)· Access time: 70, 80, 90, 120ns· High-density 16MByte design· High-reliability, low-power design· Single + 3V to 3.6V power supply· 100-Pin Designed 50-Pin Fine Pitch MMC Connector P1,P2· Minimum 1,000,000 write cycle gua...

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HMF8M16F8V Picture
SeekIC No. : 004364696 Detail

HMF8M16F8V: Features: · Part identification- HMF8M16F8V(Bottom boot block configuration)· Access time: 70, 80, 90, 120ns· High-density 16MByte design· High-reliability, low-power design· Single + 3V to 3.6V pow...

floor Price/Ceiling Price

Part Number:
HMF8M16F8V
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· Part identification
- HMF8M16F8V(Bottom boot block configuration)
· Access time: 70, 80, 90, 120ns
· High-density 16MByte design
· High-reliability, low-power design
· Single + 3V to 3.6V power supply
· 100-Pin Designed 50-Pin Fine Pitch MMC Connector P1,P2
· Minimum 1,000,000 write cycle guarantee per sector
· 20-year data retention at 125 oC
· Flexible sector architecture
· Embedded algorithms
· Erase suspend / Erase resume



Pinout

  Connection Diagram


Specifications

PARAMETER
RATING
Voltage on Any Pin Relative to Vss
-0.5V to Vcc +0.5V
Voltage on Vcc Supply Relative to Vss
-0.5V to +4.0V
Output Short Circuit Current
1,600mA
Storage Temperature
-65 to +150
Operating Temperature
-0 to +70



Description

The HMF8M16F8V is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in an x16bit configuration. The module consists of eight 2M x 8 FROM mounted on a 100-pin, MMC connector FR4-printed circuit board.

Commands are written to the command register using standard microprocessor write timings.

Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device HMF51232M4Y is similar to reading from 12.0V flash or EPROM devices.

Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module HMF51232M4Y is becoming power standby mode, system designer can get low-power design. All module components may be powered from a single +3V DC power supply and all inputs and outputs are LVTTLcompatible.




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