Features: Access time : 55,70, 90 and 120ns High-density 2MByte design High-reliability, low-power designSingle + 3V ± 0.3V power supply Easy memory expansionAll inputs and outputs are TTL- compatible FR4-PCB design Low profile 72-pin SIMMMinimum 1,000,000 write/erase cycleSector erases architect...
HMF51232M4V: Features: Access time : 55,70, 90 and 120ns High-density 2MByte design High-reliability, low-power designSingle + 3V ± 0.3V power supply Easy memory expansionAll inputs and outputs are TTL- compati...
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PinoutDescriptionThe HMF51232J4 is a high-speed flash read only memory (FROM) module containing 52...
PinoutDescriptionThe HMF51232J4V is a high-speed flash read only memory (FROM) module containing 5...
Features: Access time : 55,70, 90 and 120ns High-density 2MByte design High-reliability, low-powe...
PARAMETER | SYMBOL | RATING |
Voltage with respect to ground all other pins | VIN,OUT | -0.5V to VCC + 7.0V |
Voltage with respect to ground Vcc | VCC | -0.5V to + 4.0V |
Power Dissipation | Po | 4W |
Storage Temperature | TSTG | -65 to +125 |
Operating Temperature | TA | -55 to +125 |
Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability
The HMF51232M4V is a high-speed flash read only memory (FROM) module containing 524,288 words organized in a x32bit
configuration. The module consists of four 512Kx 8 FROM mounted on a 72-pin, single-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device HMF51232M4V is similar to reading from 12.0V flash or EPROM devices.
Four chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1) are used to enable the module HMF51232M4V's 4 bytes independently.
Output enable (/OE) and write enable (/WE) can set the memory input and output.
When FROM module is disable condition, the module HMF51232M4V is becoming power standby mode, system designer can get low-power
design.
All module HMF51232M4V components may be powered from a single +3V DC power supply and all inputs and outputs are TTL-compatible.