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HMF3M32M6V

Features: Access time : 70,80, 90 and 120ns High-density 12MByte designHigh-reliability, low-power designSingle + 3V ± 0.3V power supply Easy memory expansionHardware reset pin(RESET#) FR4-PCB designLow profile 72-pin SIMM Minimum 1,000,000 write/erase cycle Flexible sector architectureEmbedded a...

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SeekIC No. : 004364677 Detail

HMF3M32M6V: Features: Access time : 70,80, 90 and 120ns High-density 12MByte designHigh-reliability, low-power designSingle + 3V ± 0.3V power supply Easy memory expansionHardware reset pin(RESET#) FR4-PCB desi...

HMF3M32M6V Data Sheet

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Part Number:
HMF3M32M6V
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

  Access time : 70,80, 90 and 120ns
  High-density 12MByte design
 High-reliability, low-power design
 Single + 3V ± 0.3V power supply
  Easy memory expansion
 Hardware reset pin(RESET#)
  FR4-PCB design
 Low profile 72-pin SIMM
  Minimum 1,000,000 write/erase cycle
  Flexible sector architecture
 Embedded algorithms
 Erase suspend / Erase resume


Specifications

PARAMETER SYMBOL RATING
Voltage on Any Pin Relative to Vss VIN,OUT -0.5V to +4.0V
Voltage on Vcc Supply Relative to Vss VCC -0.5V to +4.0V
Power Dissipation Po 6W
Storage Temperature TSTG -65 to +150
Operating Temperature TA -55 to +125

Stresses greater than those listed under " Absolute Maximum Ratings" may cause perman ent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.




Description

The HMF3M32M6VA is a high-speed flash read only memory (FROM) module containing 6,291,456 words organized in a x32bit configuration. The module consists of six 1M x 16 FROM mounted on a 72-pin, single-sided, FR4-printed circuit board.
Commands are written to the command register using standard microprocessor write timings.

Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device HMF3M32M6V is similar to reading from other flash or EPROM devices.Output enable (/OE) and write enable (/WE) can set the memory input and output.

When FROM module is disable condition the module HMF3M32M6V is becoming power standby mode, system designer can get low -power
design. All module components may be powered from a single +3.0V DC power supply.




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