HMF2M32M4GL

·Access time : 75, 90 and 120ns
·High-density 8MByte design
·High-reliability, low-power design
·Single + 5V ± 0.5V power supply
·Easy memory expansion
·All inputs and outputs are TTL-compatible
·FR4-PCB design
·Lo·profile 72-pin SIMM
·Minimum 1,000,000 write/erase cycle
·Sectors erase architecture
·Sector group protection
·Temporary sector group unprotection
·The used device is Am29F016B

Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above thos e indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

The HMF2M32M4GL is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of four 2M x 8bit FROM mounted on a 72 -pin, single-sided, FR4-printed circuit board.

Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device HMF2M32M4GL is similar to reading from 12.0V flash or EPROM devices.

Four chip enable inputs, (/WE0, /WE1, /WE2, /WE3) are used to enable the module HMF2M32M4GL's 8 bits independently. Output enable (/OE) and write enable (/WE) can set the memory input and output.

When FROM module is disable condition the module HMF2M32M4GL is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTLcompatible.