Features: Fast Page Mode operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Fast parallel test mode capabilityTTL(5V) compatible inputs and outputsEarly write or output enable controlled writeAvailable in 20pin ZIP packages Single +5V± 10% power supply1,024 Refresh...
HMD4M1Z1: Features: Fast Page Mode operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Fast parallel test mode capabilityTTL(5V) compatible inputs and outputsEarly write or out...
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Features: Access times : 50, 60 ns w Timing High -density 64MByte design 50ns access -5Part ident...
Features: · Part Identification HMD4M32M2E----4K Cycles/64ms Ref. Solder HMD4M32M2EG- 4K Cycles/64...
Features: · Part Identification HMD4M32M2----4K Cycles/64ms Ref. Solder HMD4M32M2G- 4K Cycles/64ms...
SYMBOL |
PARAMETER |
RATING |
UNIT |
TA |
Ambient Temperature under Bias |
0 ~ 70 |
C |
TSTG |
Storage Temperature (Plastic) |
-55 ~ 150 |
C |
VIN/VOUT |
Voltage on any Pin Relative to Vss |
-1.0 ~ 7.0 |
V |
VCC |
Power Supply Voltage |
-1.0 ~ 7.0 |
V |
IOUT |
Short Circuit Output Current |
50 |
mA |
PD |
Power Dissipation |
600 |
mW |
The HMD4M1Z1 is an 4M x 1 bits Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5V ), access time (-5, -6), power onsumption(Normal or Low power), and package type (ZIP) are optional features of this Module. The MD4M1Z1 have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
The HMD4M1Z1 is optimized for application to the systems, which are required high density and large capacity such as main memory for main frames and mini computers, personal computer and high performance microprocessor systems.
The HMD4M1Z1 provides common data and outputs.