Features: ·Fast Page Mode operation·CAS-before-RAS refresh capability·RAS-only and Hidden refresh capability·Fast parallel test mode capability·TTL(5V) compatible inputs and outputs·Early write or output enable controlled write·Available in 20pin ZIP packages·Single +5V± 10% power supply·1,024 Ref...
HMD1M4Z1: Features: ·Fast Page Mode operation·CAS-before-RAS refresh capability·RAS-only and Hidden refresh capability·Fast parallel test mode capability·TTL(5V) compatible inputs and outputs·Early write or o...
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DescriptionThe HMD16M32M8EH is a 16M x 32bit dynamic RAM high-density memory module. The module co...
Features: HMD16M32M8G:4K Cycles/64ms Refresh GoldAccess times : 50, 60ns High-density 64MByte desi...
Features: ·Part Identification HMD16M32M8GH---4K Cycles/64ms Ref, Gold· Access times : 50, 60ns· H...
SYMBOL |
PARAMETER |
RATING |
UNIT |
TA |
Ambient Temperature under Bias |
0 ~ 70 |
C |
TSTG |
Storage Temperature (Plastic) |
-55 ~ 150 |
C |
VIN/VOUT |
Voltage on any Pin Relative to Vss |
-1.0 ~ 7.0 |
V |
VCC |
Power Supply Voltage |
-1.0 ~ 7.0 |
V |
IOUT |
Short Circuit Output Current |
50 |
mA |
PD |
Power Dissipation |
600 |
mW |
The HMD1M4Z1 is an 1M x 4 bits Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of
memory cells within the same row. Power supply voltage (+5V ), access time (-5, -6), power consumption(Normal or Low power), and package type (ZIP) are optional features of this Module. The HMD1M4Z1 have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
The HMD1M4Z1 is optimized for application to the systems, which are required high density and large capacity such as main memory for main frames and mini computers, personal computer and high performance microprocessor systems.
The HMD1M4Z1 provides common data and outputs.