HMC849LP4CE

Series: -
Packaging: Cut Tape (CT)Alternate Packaging
Features: SPDT
RF Type: General Purpose
Frequency: 0Hz ~ 6GHz
Package / Case: 16-VQFN Exposed Pad
Supplier Device Package: 16-QFN (4x4)
Manufacturer: Hittite Microwave Corporation


Pinout




Description

The HMC849LP4CE is a high isolation non-refl ective DC to 6 GHz GaAs pHEMT SPDT switch in a low cost leadless surface mount package. The switch is ideal for cellular/WiMAX/4G Infrastructure applications yielding up to 60 dB isolation, low 0.8 dB insertion loss and +52 dBm input IP3.

The features of HMC849LP4CE are as follows: (1)High Isolation: up to 60 dB; (2)Single Positive Control: 0/+3V to +5V; (3)High Input IP3: +52 dBm; (4)Non-Refl ective Design; (5)"All Off" State; (6)24 Lead 4x4 mm QFN Package: 16 mm2.

The electrical characteristics of the HMC849LP4CE are: (1)Insertion Loss: 0.8dB at DC - 2.0 GHz; (2)Isolation (RFC to RF1/RF2): 60dB at DC - 2.0 GHz; (3)Return Loss (On State): 17dB at DC - 4.0 GHz; (4)Return Loss (Off State): 15 dB at DC - 6.0 GHz; (5)Input Power for 1 dB Compression +3V: 30dBm at 0.35 - 4.0 GHz; (6)Input Third Order Intercept (Two-Tone Input Power = +7 dBm Each Tone): 52 dBm at DC - 6.0 GHz; (7)Switching Speed tRISE, tFALL (10/90% RF): 80ns at DC - 4.0 GHz 80.