PinoutDescriptionThe HMC770LP4BE is a GaAs pHEMT Differential Gain Block MMIC amplifi er covering 40 MHz to 1 GHz and packaged in a 4x4 mm plastic QFN SMT package. This versatile amplifi er can be used as a cascadable IF or RF gain stage in both 50 Ohm and 75 Ohm applications. The features of HMC...
HMC770LP4BE: PinoutDescriptionThe HMC770LP4BE is a GaAs pHEMT Differential Gain Block MMIC amplifi er covering 40 MHz to 1 GHz and packaged in a 4x4 mm plastic QFN SMT package. This versatile amplifi er can be u...
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The HMC770LP4BE is a GaAs pHEMT Differential Gain Block MMIC amplifi er covering 40 MHz to 1 GHz and packaged in a 4x4 mm plastic QFN SMT package. This versatile amplifi er can be used as a cascadable IF or RF gain stage in both 50 Ohm and 75 Ohm applications.
The features of HMC770LP4BE are as follows: (1)High Output IP3: +40 dBm; (2)Single Positive Supply: +5V; (3)Low Noise Figure: 2.5 dB [1]; (4)Differential RF I/O's; (5)20 Lead 4x4 mm SMT Package: 16mm2.
The electrical characteristics of the HMC770LP4BE are: (1)Frequency Range: 0.04 - 1 GHz; (2)Gain: 16 dB; (3)Gain Variation Over Temperature: 0.008 dB / °C; (4)Input Return Loss: 15 dB; (5)Output Return Loss: 15 dB; (6)Output Power for 1 dB Compression (P1dB): 23.5 dBm; (7)Output Third Order Intercept (IP3) (Pout = 0 dBm per tone, 1 MHz spacing): 37.5 dBm; (8)Noise Figure: 2.75 dB; (9)Transimpedance: 700 Ohms.