DescriptionThe HMC756 is a three stage GaAs PHEMT MMIC 1 Watt Power Amplifi er which operates between 16 and 24 GHz. Theproduct provides 23 dB of gain, and +33 dBm of saturated output power at 28% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into...
HMC756: DescriptionThe HMC756 is a three stage GaAs PHEMT MMIC 1 Watt Power Amplifi er which operates between 16 and 24 GHz. Theproduct provides 23 dB of gain, and +33 dBm of saturated output power at 28% P...
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The HMC756 is a three stage GaAs PHEMT MMIC 1 Watt Power Amplifi er which operates between 16 and 24 GHz. The product provides 23 dB of gain, and +33 dBm of saturated output power at 28% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs).
The features of HMC756 are as follows: (1)Saturated Output Power: +33 dBm @ 28% PAE; (2)High Output IP3: +41 dBm; (3)High Gain: 23 dB; (4)DC Supply: +7V @ 790mA; (5)DC Blocked RF I/Os; (6)No External Matching Required; (7)Die Size: 2.4 x 1.6 x 0.1 mm.
The electrical characteristics of the HMC756 are: (1)Frequency Range: 20 - 24 GHz; (2)Gain: 23 dB; (3)Gain Variation Over Temperature: 0.03 dB/ °C; (4)Input Return Loss: 15 dB; (5)Output Return Loss: 16 dB; (6)Output Power for 1 dB Compression (P1dB): 32 dBm; (7)Saturated Output Power (Psat): 33 dBm; (8)Output Third Order Intercept (IP3)[2]: 40 dBm; (9)Total Supply Current (Idd): 790 mA.