HMC755LP4E

The HMC755LP4E is a high gain, high linearity GaAs InGaP HBT MMIC Power amplifi er covering 2.3 to 2.8 GHz. The amplifi er provides 31 dB of gain and +33 dBm of saturated power from a single +5V supply. The power control pins (VEN1, 2, 3) can be used to reduce the RF output power/quiescent current, or for full power down of the PA.

The features of HMC755LP4E are as follows: (1)High Gain: 31 dB; (2)High PAE: 28% @ +33 dBm Pout; (3)Low EVM: 2.5% @ Pout = +25 dBm with 54 Mbps OFDM Signal; (4)High Output IP3: +43 dBm; (5)Integrated Detector & Power Control; (6)24 Lead 4x4mm QFN Package: 16mm2.

The electrical characteristics of the HMC755LP4E are: (1)Frequency Range: 2.3 - 2.8 GHz; (2)Gain: 31 dB; (3)Gain Variation Over Temperature: 0.05 dB/ °C; (4)Input Return Loss: 10 dB; (5)Output Return Loss: 7 dB; (6)Output Power for 1dB Compression (P1dB): 31 dBm; (7)Saturated Output Power (Psat): 33 dBm; (8)Output Third Order Intercept (IP3): 43 dBm; (9)Error Vector Magnitude @ 2.5 GHz (54 Mbps OFDM Signal @ +22 dBm Pout): 2.5 %; (10)Supply Current (Icc1 + Icc2 + Icc3): 400 to 600 mA.