DescriptionThe HMC754S8GE is a GaAs/InGaP HBT Dual Channel Gain Block MMIC SMT amplifi er covering DC to 1 GHz. This versatile product contains two gain blocks, packaged in a single 8 lead plastic SOIC-8, for use with both amplifi ers combined in push-pull confi guration using external baluns to c...
HMC754S8GE: DescriptionThe HMC754S8GE is a GaAs/InGaP HBT Dual Channel Gain Block MMIC SMT amplifi er covering DC to 1 GHz. This versatile product contains two gain blocks, packaged in a single 8 lead plastic S...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
DescriptionThe HMC700LP4(E) is a SiGe BiCMOS fractional-N frequency synthesizer. The synthesizer i...
PinoutDescriptionThe HMC702LP6CE is a SiGe BiCMOS fractional-N frequency synthesizer. The synthesi...
The HMC754S8GE is a GaAs/InGaP HBT Dual Channel Gain Block MMIC SMT amplifi er covering DC to 1 GHz. This versatile product contains two gain blocks, packaged in a single 8 lead plastic SOIC-8, for use with both amplifi ers combined in push-pull confi guration using external baluns to cancel out second order non-linearities and improve IP2 performance.
The features of HMC754S8GE are as follows: (1)Output IP2: +78 dBm; (2)High Gain: 14.5 dB; (3)High Output IP3: +38 dBm; (4)75 Ohm Impedance; (5)Single Positive Supply: +5V; (6)Robust 1000V ESD, Class 1C; (7)SOIC-8 SMT Package.
The electrical characteristics of the HMC754S8GE are: (1)Gain: 14.7dB at 0.05 - 0.5 GHz, 14.2dB at 0.5 - 0.87 GHz, 13.4dB at 0.87 - 1.0 GHz; (2)Gain Variation Over Temperature: 0.008 dB/ °C at 0.05 - 0.87 GHz; (3)Input Return Loss: 10dB at 0.05 - 0.5 GHz, 20dB at 0.5 - 0.87 GHz; (4)Output Return Loss: 10dB at 0.05 - 0.5 GHz, 10dB at 0.5 - 0.87 GHz; (5)Reverse Isolation: 23 dB at 0.05 - 0.87 GHz; (6)Output Power for 1 dB Compression (P1dB): 21 dBm at 0.05 - 0.87 GHz.