DescriptionThe HMC740ST89E is an InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering 0.05 to 3 GHz. Packaged in an industry standard SOT89, the HMC740ST89E amplifi er can be used as a cascadable 50 Ohm RF or IF gain stage as well as a PA or LO driver with up to +18...
HMC740ST89E: DescriptionThe HMC740ST89E is an InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering 0.05 to 3 GHz. Packaged in an industry standard SOT89, the HMC740ST89E amplifi e...
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The HMC740ST89E is an InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering 0.05 to 3 GHz. Packaged in an industry standard SOT89, the HMC740ST89E amplifi er can be used as a cascadable 50 Ohm RF or IF gain stage as well as a PA or LO driver with up to +18 dBm output power.
The features of HMC740ST89E are as follows: (1)P1dB Output Power: +18 dBm; (2)Gain: 15 dB; (3)Output IP3: +40 dBm; (4)Cascadable 50 Ohm I/Os; (5)Single Supply: +5V; (6)Industry Standard SOT89 Package; (7)Robust 1000V ESD, Class 1C; (8)Stable Current Over Temperature; (9)Active Bias Network.
The electrical characteristics of the HMC740ST89E are: (1)Frequency Range: 0.05 - 3 GHz; (2)Gain: 15 dB; (3)Gain Flatness: ±0.7 dB; (4)Gain Variation over Temperature: 0.003 dB/ °C; (5)Input Return Loss: 15 dB; (6)Output Return Loss: 18 dB; (7)Reverse Isolation: 21 dB; (8)Output Power for 1 dB Compression (P1dB): 17 dBm; (9)Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing): 32 dBm; (10)Noise Figure: 3.5 dB; (11)Supply Current (Icq): 88 mA.