HMC737LP4

The HMC737LP4 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC737LP4(E) integrate a resonator, negative resistance device, varactor diode and feature half frequency output. The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +9 dBm typical from a +4.2V supply voltage.

The features of HMC737LP4 are as follows: (1)Dual Output: Fo = 14.9 - 15.5 GHz, Fo/2 = 7.45 - 7.75 GHz; (2)Pout: +9 dBm; (3)Phase Noise: -105 dBc/Hz @ 100 kHz; (4)No External Resonator Needed; (5)24 Lead 4x4mm SMT Package: 16mm2.

The electrical characteristics of the HMC737LP4 are: (1)Frequency Range: Fo 14.9 - 15.5 GHz, Fo/4 7.45 - 7.75 GHz; (2)Power Output: RFOUT 6 to 13 dBm, RFOUT/4 -8 to 2 dBm; (3)SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT: -105 dBc/Hz; (4)Tune Voltage Vtune: 1 to 13 V; (5)Supply Current Icc(Dig) + Icc(Amp) + Icc(RF): 120 to 180 mA; (6)Tune Port Leakage Current (Vtune= 13V): 10 A; (7)Output Return Loss (RFOUT): 2.5 dB.