DescriptionThe HMC735LP5 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC735LP5(E) integrates resonators, negative resistance devices, varactor diodes and features a divide-by-4 frequency output. The VCO's phase noise performance is excellent over temperature, shock, and p...
HMC735LP5: DescriptionThe HMC735LP5 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC735LP5(E) integrates resonators, negative resistance devices, varactor diodes and features a divide-...
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The HMC735LP5 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC735LP5(E) integrates resonators, negative resistance devices, varactor diodes and features a divide-by-4 frequency output. The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure.
The features of HMC735LP5 are as follows: (1)Dual Output: Fo = 10.5 - 12.2 GHz, Fo/4 = 2.625 - 3.05 GHz; (2)Pout: +17 dBm; (3)Phase Noise: -100 dBc/Hz @ 100 kHz Typ.; (4)No External Resonator Needed; (5)32 Lead 5x5mm SMT Package: 25mm2.
The electrical characteristics of the HMC735LP5 are: (1)Frequency Range: Fo 10.5 - 12.2 GHz, Fo/4 2.625 - 3.05 GHz; (2)Power Output: RFOUT 14 to 21 dBm, RFOUT/4 -8 to -1 dBm; (3)SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT: -100 dBc/Hz; (4)Tune Voltage Vtune: 1 to 13 V; (5)Supply Current Icc(Dig) + Icc(Amp) + Icc(RF): 180 to 240 mA; (6)Tune Port Leakage Current (Vtune= 13V): 10 A; (7)Output Return Loss (RFOUT): 8 dB.