DescriptionThe HMC734LP5 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC734LP5(E) integrates a resonator, negative resistance device, varactor diode and features a divide-by-4 frequency output. The VCO's phase noise performance is excellent over temperature, shock, and pr...
HMC734LP5: DescriptionThe HMC734LP5 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC734LP5(E) integrates a resonator, negative resistance device, varactor diode and features a divide-b...
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The HMC734LP5 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC734LP5(E) integrates a resonator, negative resistance device, varactor diode and features a divide-by-4 frequency output. The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure.
The features of HMC734LP5 are as follows: (1)Dual Output: Fo = 8.6 - 10.2 GHz, Fo/4 = 2.15 - 2.55 GHz; (2)Pout: +18 dBm; (3)Phase Noise: -100 dBc/Hz @ 100 kHz Typ.; (4)No External Resonator Needed; (5)32 Lead 5x5mm SMT Package: 25mm2.
The electrical characteristics of the HMC734LP5 are: (1)Frequency Range: Fo 8.6 - 10.2 GHz, Fo/4 2.15 - 2.55 GHz; (2)Power Output: RFOUT 15 to 22 dBm, RFOUT/4 -8 to -1 dBm; (3)SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT: -100 dBc/Hz; (4)Tune Voltage Vtune: 1 to 13 V; (5)Supply Current Icc(Dig) + Icc(Amp) + Icc(RF): 180 to 240 mA; (6)Tune Port Leakage Current (Vtune= 13V): 10 A; (7)Output Return Loss (RFOUT): 8 dB.