PinoutDescriptionThe HMC707LP5 is a digitally controlled variable gain amplifi er which operates from 700 MHz to 1200 MHz, and can be programmed to provide between -2.5 dB attenuation and 29 dB of gain, in 0.5 dB steps. The HMC707LP5(E) delivers noise fi gure of 0.8 dB in its maximum gain state, w...
HMC707LP5: PinoutDescriptionThe HMC707LP5 is a digitally controlled variable gain amplifi er which operates from 700 MHz to 1200 MHz, and can be programmed to provide between -2.5 dB attenuation and 29 dB of g...
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DescriptionThe HMC700LP4(E) is a SiGe BiCMOS fractional-N frequency synthesizer. The synthesizer i...
PinoutDescriptionThe HMC702LP6CE is a SiGe BiCMOS fractional-N frequency synthesizer. The synthesi...
The HMC707LP5 is a digitally controlled variable gain amplifi er which operates from 700 MHz to 1200 MHz, and can be programmed to provide between -2.5 dB attenuation and 29 dB of gain, in 0.5 dB steps. The HMC707LP5(E) delivers noise fi gure of 0.8 dB in its maximum gain state, with output IP3 of up to +38 dBm.
The features of HMC707LP5 are as follows: (1)-2.5 to +29 dB Gain Control in 0.5 dB Steps; (2)Power-up State Selection; (3)High Output IP3: +38 dBm; (4)Low Noise Figure: 0.8 dB; (5)TTL/CMOS Compatible Serial, Parallel, or Latched Parallel Control; (6)±0.25 dB Typical Step Error; (7)Single +3V and +5V Supply; (8)32 Lead 5x5mm SMT Package: 25mm2.
The electrical characteristics of the HMC707LP5 are: (1)Frequency Range: 0.7 - 1.2 GHz; (2)Gain (Maximum Gain State): 29 dB; (3)Gain Control Range: 31.5 dB; (4)Input Return Loss: 14 dB; (5)Output Return Loss: 15.5 dB; (6)Attenuation Accuracy: (Referenced to Maximum Gain State): ±(0.3 + 4.5%) of Attenuation Setting dB; (7)Output Power for 1 dB Compression: 21 dBm; (8)Output Third Order Intercept Point: 38.5 dBm; (9)Noise Figure: 0.8 dB; (10)Switching Characteristics tRISE, tFALL (50% CTL to 90% RF): 205 / 180 ns; (11)Current Amp 1: 88 mA.