Features: ·P1dB Output Power: +26.5 dBm·Gain: 19 dB·Output IP3: +35 dBm·Supply Voltage: +8V @ 300 mA·50 Ohm Matched Input/Output·Die Size: 3.115 x 1.630 x 0.1 mmApplicationThe HMC659 is ideal for:·Telecom Infrastructure·Microwave Radio & VSAT·Military & Space·Test Instrumentation·Fiber Opt...
HMC659: Features: ·P1dB Output Power: +26.5 dBm·Gain: 19 dB·Output IP3: +35 dBm·Supply Voltage: +8V @ 300 mA·50 Ohm Matched Input/Output·Die Size: 3.115 x 1.630 x 0.1 mmApplicationThe HMC659 is ideal for:·T...
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DescriptionThe HMC600LP4(E) Logarithmic Detector/Controller converts RF signals at its input, to a...
DescriptionThe HMC601LP4(E) Logarithmic Detector/Controller converts RF signals at its input, to a...
Drain Bias Voltage (Vdd) | +9 Vdc |
Gate Bias Voltage (Vgg1) | 0 to -2 Vdc |
Gate Bias Voltage (Vgg2) | +2V to +4V |
RF Input Power (RFIN)(Vdd = +12V | +20 dBm |
Channel Temperature | 175 |
Continuous Pdiss (T=85 (derate 41 mW/ above 85 |
3.69 W |
Thermal Resistance (channel to die bottom) |
24.4/W |
Storage Temperature | -65 to +150 |
Operating Temperature | -55 to +85 |
The HMC659 is a GaAs MMIC PHEMT Distributed Power Amplii er die which operates between DC and 15 GHz. The HMC659 amplii er provides 19 dB of gain, +35 dBm output IP3 and +26.5 dBm of output power at 1 dB gain compression while quiring 300 mA from a +8V supply. Gain l atness is excellent at 0.5 dB from DC to 10 GHz making the HMC619 ideal for EW, CM, Radar and test equipment applications.The HMC659 amplii er I/Os are internally matched to 50 ohms facilitating gration into Mutli-ChipModules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).