HMC636ST89E

Series: -
Test Frequency: -
Packaging: Cut Tape (CT)Alternate Packaging
Voltage - Supply: 5V
Current - Supply: 175mA
RF Type: General Purpose
Package / Case: TO-243AA
Noise Figure: 2dB
Gain: 10dB
P1dB: 23dBm
Manufacturer: Hittite Microwave Corporation
Frequency: 200MHz ~ 4GHz


Features:

·Low Noise Figure: 2.2 dB
·High P1dB Output Power: +22 dBm
·High Output IP3: +40 dBm
·Gain: 13 dB
·50 Ohm I/O's - No External Matchin
·Industry Standard SOT89 Package


Application

·The HMC636ST89(E) is ideal for:
·Cellular / PCS / 3G
·WiMAX, WiBro, & Fixed Wireless
·CATV & Cable Modem
·Microwave Radio


Specifications

Collector Bias Voltage (Vcc)	+5.5 Volts
RF Input Power (RFIN)(Vcc = +5 Vdc)	+16 dBm
Channel Temperature	150
Continuous Pdiss (T = 85) (derate 13.3 mW/ above 85)	0.86W
Thermal Resistance (Channel to lead)	75.6/W
Storage Temperature	-65 to +150
Operating Temperature	-40 to +85

Description

The HMC636ST89(E) is a GaAs PHEMT, High Linearity, Low Noise, Wideband Gain Block Amplii er covering 0.2 to 4.0 GH z. Packaged in an industry standard SOT89, the HMC636ST89(E) amplii er can be used as either a cascadable 50 Ohm gain stage, a PA Pre-Driver, a Low Noise Amplii er, or a Gain Block with up to +23 dBm output power. This versatile Gain Block Amplii er is powered from a single +5V supply and requires no external matching components The internally matched topology makes this amplii er compatible with virtually any PCB material or thickness.