Features: Output IP3: +33 dBm Saturated Power: +27.5 dBm @ 23% PAE Gain: 32 dB Supply: +5V @ 310 mA 50 Ohm Matched Input/Output 2.1 x 1.2 x 0.1 mm Die SizeApplicationThe HMC608 is ideal for:• Point-to-Point Radios• Point-to-Multi-Point Radios• Military End-UseSpecifications ...
HMC608: Features: Output IP3: +33 dBm Saturated Power: +27.5 dBm @ 23% PAE Gain: 32 dB Supply: +5V @ 310 mA 50 Ohm Matched Input/Output 2.1 x 1.2 x 0.1 mm Die SizeApplicationThe HMC608 is ideal for:•...
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DescriptionThe HMC600LP4(E) Logarithmic Detector/Controller converts RF signals at its input, to a...
DescriptionThe HMC601LP4(E) Logarithmic Detector/Controller converts RF signals at its input, to a...
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) | 7 Vdc |
Gate Bias Voltage (Vgg) | -4.0 to -1.0 Vdc |
RF Input Power (RFin)(Vdd = +5.0 Vdc) | +10 dBm |
Channel Temperature | 175 |
Continuous Pdiss (T= 85 ) (derate 2.9 mW/ above 85 ) |
2.33W |
Thermal Resistance (channel to package bottom) |
39.6/ W |
Storage Temperature | -65 to + 150 |
Operating Temperature | -55 to + 85 |
The HMC608 is a high dynamic range GaAs PHEMT MMIC Medium Power Amplifi er chip. The HMC608 amplifi er has two modes of operation: high gain mode (Vpd pin shorted to ground); and low gain mode (Vpd pin left open). The electrical specifi cations in the table below are shown for the amplifi er operating in high gain mode. Operating from 9.5 to 11.5 GHz, the amplifi er provides 32 dB of gain, +27.5 dBm of saturated power and 23% PAE from a +5.0 V supply voltage. Noise fi gure is 5.5 dB while output IP3 is +33 dBm. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use.