Features: High Linearity: +25 dBm IIP3 & +60 dBm IIP2Low Noise Figure: 15 dBHigh Integration: On-Chip RF BalunApplicationThe HMC597LP4 / HMC597LP4E is suitable for various modulation systems:• Cellular/PCS/3G• Base Stations & Repeaters• GSM/GPRS, WCDMA & TD-SCDMA̶...
HMC597LP4: Features: High Linearity: +25 dBm IIP3 & +60 dBm IIP2Low Noise Figure: 15 dBHigh Integration: On-Chip RF BalunApplicationThe HMC597LP4 / HMC597LP4E is suitable for various modulation systems:...
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Features: ·360° of Continuous Phase Control·40 dB of Continuous Gain Control·-162 dBm/Hz Output No...
Vcc1, Vcc2 LO Input Power Channel Temperature Continuous Pdiss (T = 85) (Derate 30 mW/ above 85) Thermal Resistance (Rth) (junction to lead) Storage Temperature Operating Temperature |
+6V +12 dBm 150 2 Watts 36 -65 to +150 -40 to +85 |
The HMC597LP4(E) are highly integrated SiGe wideband direct conversion I/Q Demodulator RFICs which are ideal for high dynamic range receivers operating from 100 - 4000 MHz in cellular and broadband wireless infrastructure applications. Providing a very high level of integration compared with discrete solutions, the HMC597LP4(E) features an on-chip RF balun which allows for singled ended RF input. An off-chip capacitor allows the reconfi guration of the RF port to operate over the whole 100 - 4000 MHz band without additional off-chip components. Also ideal for software radio and other multi-band receivers, the HMC597LP4(E) demodulator is housed in a compact 4 x 4 mm SMT QFN package and delivers exceptionally high dynamic range. The LO requires -6 to +6 dBm and can be driven in single-ended mode. The I and Q output ports are differential with an output impedance of 400 Ohms, allowing direct connection to channel fi lters and ADCs. This device is optimized for a supply voltage of +4.5V to +5.5V and consumes 200 mA @ +5V supply.