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HMC592

Features: Saturated Output Power:+31 dBm @ 21% PAEOutput IP3: +38 dBmGain: 19 dBDC Supply: +7.0 V @ 750 mA50 Ohm Matched Input/OutputDie Size: 2.47 mm x 1.17 mm x 0.1 mmApplicationThe HMC592 is ideal for use as a power amplifi er for:• Point-to-Point Radios• Point-to-Multi-Point Radios...

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SeekIC No. : 004364285 Detail

HMC592: Features: Saturated Output Power:+31 dBm @ 21% PAEOutput IP3: +38 dBmGain: 19 dBDC Supply: +7.0 V @ 750 mA50 Ohm Matched Input/OutputDie Size: 2.47 mm x 1.17 mm x 0.1 mmApplicationThe HMC592 is idea...

HMC592 Data Sheet

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Part Number:
HMC592
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

Saturated Output Power:+31 dBm @ 21% PAE
Output IP3: +38 dBm
Gain: 19 dB
DC Supply: +7.0 V @ 750 mA
50 Ohm Matched Input/Output
Die Size: 2.47 mm x 1.17 mm x 0.1 mm


Application

The HMC592 is ideal for use as a power amplifi er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
• Military End-Use
• Space


Specifications

Drain Bias Voltage (Vdd) ...............................+8 Vdc
Gate Bias Voltage (Vgg) .......................-2.0 to 0 Vdc
RF Input Power (RFin)(Vdd = +7.0 Vdc)..... +15 dBm
Channel Temperature ....................................175
Continuous Pdiss (T= 85 )
(derate 62.7 mW/ above 85 )..................5.64 W
Thermal Resistance
(channel to die bottom)...........................15.94 /W
Storage Temperature........................ -65 to +150
Operating Temperature -55 to +85


Description

The HMC592 is a high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifi er which operates from 10 to 13 GHz. This HMC592 amplifi er die provides 19 dB of gain and +31 dBm of saturated power, at 21% PAE from a +7.0V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 ohm test fi xture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 400 mA, to yield +38 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 750 mA, to yield +31 dBm Output P1dB.




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