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HMC591LP5E

Features: Saturated Output Power: +33 dBm @ 20% PAEOutput IP3: +41 dBmGain: 18 dBDC Supply: +7.0 V @ 1340 mA50 Ohm Matched Input/OutputQFN Leadless SMT Packages, 25 mm2ApplicationThe HMC591LP5 / HMC591LP5E is ideal for use as a power amplifi er for:• Point-to-Point Radios• Point-to-Mul...

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SeekIC No. : 004364284 Detail

HMC591LP5E: Features: Saturated Output Power: +33 dBm @ 20% PAEOutput IP3: +41 dBmGain: 18 dBDC Supply: +7.0 V @ 1340 mA50 Ohm Matched Input/OutputQFN Leadless SMT Packages, 25 mm2ApplicationThe HMC591LP5 / HMC...

HMC591LP5E Data Sheet

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Part Number:
HMC591LP5E
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Saturated Output Power: +33 dBm @ 20% PAE
Output IP3: +41 dBm
Gain: 18 dB
DC Supply: +7.0 V @ 1340 mA
50 Ohm Matched Input/Output
QFN Leadless SMT Packages, 25 mm2


Application

The HMC591LP5 / HMC591LP5E is ideal for use as a power amplifi er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
• Military End-Use
• Space


Pinout

Connection Diagram


Specifications

Drain Bias Voltage (Vdd) +8 Vdc
Gate Bias Voltage (Vgg) -2.0 to 0 Vdc
RF Input Power (RFin)(Vdd = +7.0 Vdc) +15 dBm
Junction Temperature 175
Continuous Pdiss (T= 75)
(derate 26mW/ above 75)		 10.43 W
Thermal Resistance
(channel to die bottom)		 9.59/W
Storage Temperature -65 to +150
Operating Temperature -40 to to +85



Description

The HMC591LP5 & HMC591LP5E are high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifi ers which operate from 6 to 9.5 GHz. The HMC591LP5 & HMC591LP5E amplifi er provides 18 dB of gain, +33 dBm of saturated power, and 19% PAE from a +7.0V supply. This 50 Ohm matched amplifi er does not require any external components and the RF I/Os are DC blocked for robust operation. For applications which require optimum OIP3, Idd should be set for 940 mA, to yield +41 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 1340 mA, to yield +33 dBm Output P1dB.




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