Features: Saturated Output Power: +31.5 dBm @ 23% PAE Output IP3: +40 dBm Gain: 21 dB DC Supply: +7.0 V @ 820 mA 50 Ohm Matched Input/Output QFN Leadless SMT Packages, 25 mm2ApplicationThe HMC590LP5 / HMC590LP5E is ideal for use as a power amplifi er for:• Point-to-Point Radios• Point...
HMC590LP5: Features: Saturated Output Power: +31.5 dBm @ 23% PAE Output IP3: +40 dBm Gain: 21 dB DC Supply: +7.0 V @ 820 mA 50 Ohm Matched Input/Output QFN Leadless SMT Packages, 25 mm2ApplicationThe HMC590LP...
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Features: ·360° of Continuous Phase Control·40 dB of Continuous Gain Control·-162 dBm/Hz Output No...
Supply Voltage (Vdd) | +8.0 VDC |
Gate Bias Voltage (Vgg) | -2.0 to 0 Vdc |
RF Input Power (RFin)(Vdd = +7.0 Vdc) | +12 dBm |
Storage Temperature (Tstg) | 175 |
Continuous Pdiss (T= 75 ) (derate 59.8 mW/ above 75 ) |
5.98 W |
Thermal Resistance (channel to package bottom) |
16.72 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -55 to +85 |
The HMC590LP5 & HMC590LP5E are high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifi ers which operate from 6 to 9.5 GHz. The amplifi er provides 21 dB of gain, +31 dBm of saturated power, and 23% PAE from a +7.0V supply. This 50 Ohm matched amplifi er does not require any external components and the RF I/Os are DC blocked for robust operation. For applications which require optimum OIP3, Idd should be set for 520 mA, to yield +40 dBm OIP3. For applications of HMC590LP5 & HMC590LP5E which require optimum output P1dB, Idd should be set for 820 mA, to yield +30 dBm Output P1dB.