HMC582LP5

The HMC582LP5 & HMC582LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC582LP5 & HMC582LP5E integrate resona-tors, negative resistance devices, varactor diodes and feature half frequency and ideby-4 outputs. The VCOs phase noise performance is excellent ove temperature, shock, and process due to the rsmonolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface ount package, and requires no external matching components.