Features: ·High Output Power: +13 dBm·Low Input Power Drive: 0 to +6 dBm·Fo Isolation: >25 dBc @ Fout= 38 GHz·100 KHz SSB Phase Noise: -127 dBc/Hz·Single Supply: +5V@ 70 mA·Die Size: 1.18 mm x 1.23 mm x 0.1 mmApplicationThe HMC579 is suitable for:• Clock Generation Applications:SONET OC-1...
HMC579: Features: ·High Output Power: +13 dBm·Low Input Power Drive: 0 to +6 dBm·Fo Isolation: >25 dBc @ Fout= 38 GHz·100 KHz SSB Phase Noise: -127 dBc/Hz·Single Supply: +5V@ 70 mA·Die Size: 1.18 mm x 1....
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Features: ·360° of Continuous Phase Control·40 dB of Continuous Gain Control·-162 dBm/Hz Output No...
RF Input (Vdd = +5V) | +13 dBm |
Supply Voltage (Vdd1, Vdd2) | +6.0 Vdc |
Channel Temperature | 175 |
Continuous Pdiss (Ta = 85 ) (derate 3.95 mW/ above 85 ) |
656 mW |
Thermal Resistance (junction to ground paddle) |
137 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |
The HMC579 die is a x2 active broadband frequency multiplier utilizing GaAs PHEMT technology. When driven by a +3 dBm signal, the multiplier provides +13 dBm typical output power from 32 to 46 GHz. The Fo isolation is >25 dBc at 38 GHz. The HMC579 is ideal for use in LO multiplier chains for Pt to Pt & VSAT Radios yielding reduced parts count vs. traditional approaches. The low additive SSB Phase Noise of -127 dBc/Hz at 100 kHz offset helps maintain good system noise performance.