Features: High Output Power: +12 dBmLow Input Power Drive: 0 to +6 dBmFo Isolation: >20 dBc @ Fout= 16 GHz100 KHz SSB Phase Noise: -134 dBc/HzSingle Supply: +5V@ 92 mARoHS Compliant 3x3 mm SMT PackageApplicationThe HMC573LC3B is suitable for:• Clock Generation Applications: SONET OC-192 &...
HMC573LC3B: Features: High Output Power: +12 dBmLow Input Power Drive: 0 to +6 dBmFo Isolation: >20 dBc @ Fout= 16 GHz100 KHz SSB Phase Noise: -134 dBc/HzSingle Supply: +5V@ 92 mARoHS Compliant 3x3 mm SMT Pa...
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Features: ·360° of Continuous Phase Control·40 dB of Continuous Gain Control·-162 dBm/Hz Output No...
RF Input (Vdd = +5V) Supply Voltage (Vdd) Channel Temperature Continuous Pdiss (T= 85 ) (derate 8.0 mW/°C above 85 ) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature |
+10 dBm +6.0 Vdc 175 719 mW 125 /W -65 to +150 -40 to +85 |
The HMC573LC3B is a x2 active broadband frequency multiplier utilizing GaAs PHEMT technology in a leadless RoHS compliant SMT package. When driven by a +5 dBm signal, the multiplier provides +12 dBm typical output power from 8 to 22 GHz. The Fo and 3Fo isolations are >20 dBc and >25 dBc respectively at 16 GHz. The HMC573LC3B is ideal for use in LO multiplier chains for Pt to Pt & VSAT Radios yielding reduced parts count vs. traditional approaches. The low additive SSB Phase Noise of -134 dBc/Hz at 100 kHz offset helps maintain good system noise performance. The RoHS packaged HMC573LC3B eliminates the need for wire bonding, and allows the use of surface mount manufacturing techniques.