Features: ·Noise Figure: 2.3 dB·Gain: 22 dB·OIP3: 20 dBm·Single Supply: +3V @ 53 mA·50 Ohm Matched Input/Output·Small size: 2.53 x 0.98 x 0.10 mmApplicationThe HMC565 is ideal for use as a LNA or driver amplifier for:• Point-to-Point Radios• Point-to-Multi-Point Radios & VSAT•...
HMC565: Features: ·Noise Figure: 2.3 dB·Gain: 22 dB·OIP3: 20 dBm·Single Supply: +3V @ 53 mA·50 Ohm Matched Input/Output·Small size: 2.53 x 0.98 x 0.10 mmApplicationThe HMC565 is ideal for use as a LNA or dr...
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Features: ·360° of Continuous Phase Control·40 dB of Continuous Gain Control·-162 dBm/Hz Output No...
Drain Bias Voltage(Vdd1,Vdd2,Vdd3) | +3.5 Vdc |
RF Input Power (RFin)(Vs = +3.0 Vdc) | 0 dBm |
Channel Temperature | 175 |
Continuous Pdiss (T = 85 ) (derate 8.9 mW/ above 85 ) |
0.75 W |
Thermal Resistance (channel to die bottom) |
119 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |
The HMC565 is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifi er (LNA) chip which operates from 6 to 20 GHz. The HMC565 features 22 dB of small signal gain, 2.3 dB of noise fi gure and has a consistent IP3 of 20 dBm across the operating band. This selfbiased LNA is ideal for hybrid and MCM assemblies due to its compact size, widband performance, single +3V supply operation, and DC blocked RF I/O's. All data is measured with the chip in a 50 Ohm test fi xture connected via two 0.025 mm (1 mil) diameter bondwires of minimal length 0.31 mm (12 mil).