Features: P1dB Output Power: +12 dBmGain: 12.5 dBOutput IP3: +19 dBmSupply Voltage: +8V @ 80 mA50 Ohm Matched Input/Output3.12 mm x 1.42 mm x 0.1 mmApplicationThe HMC562 wideband driver is ideal for:• Military & Space• Test Instrumentation• Fiber OpticsSpecifications Dra...
HMC562: Features: P1dB Output Power: +12 dBmGain: 12.5 dBOutput IP3: +19 dBmSupply Voltage: +8V @ 80 mA50 Ohm Matched Input/Output3.12 mm x 1.42 mm x 0.1 mmApplicationThe HMC562 wideband driver is ideal for...
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Features: ·360° of Continuous Phase Control·40 dB of Continuous Gain Control·-162 dBm/Hz Output No...
Drain Bias Voltage (Vdd) | +10 Vdc |
Gate Bias Voltage (Vgg) | -2.0 to 0 Vdc |
RF Input Power (RFin)(Vdd = +10 Vdc) | +23 dBm |
Junction Temperature | 175 |
Continuous Pdiss (T= 85) (derate 26mW/ above 85) |
23 W |
Thermal Resistance (channel to die bottom) |
39/W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to to +85 |
ESD Sensitivity (HBM) | Class 1A |
The HMC562 is a GaAs MMIC PHEMT Distributed Driver Amplifi er die which operates between 2 and 35 GHz. The amplifi er provides 12.5 dB of gain, +19 dBm output IP3 and +12 dBm of output power at 1 dB gain compression while requiring 80 mA from a +8V supply. The HMC562 is ideal for EW, ECM and radar driver amplifi er applications. The HMC562 amplifi er I/O's are DC blocked and internally matched to 50 Ohms facilitating integration into Multi- Chip-Modules (MCMs). All data is taken with the chip connected via two 0.075mm (3 mil) ribbon bonds of minimal length 0.31mm (12 mils).