HMC559

Features: P1dB Output Power: +28 dBmGain: 14 dBOutput IP3: +36 dBmSupply Voltage: +10V @ 400 mA50 Ohm Matched Input/Output3.12 mm x 1.50 mm x 0.1 mmApplicationThe HMC559 wideband PA is ideal for:• Telecom Infrastructure• Microwave Radio & VSAT• Military & Space• Tes...

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SeekIC No. : 004364242 Detail

HMC559: Features: P1dB Output Power: +28 dBmGain: 14 dBOutput IP3: +36 dBmSupply Voltage: +10V @ 400 mA50 Ohm Matched Input/Output3.12 mm x 1.50 mm x 0.1 mmApplicationThe HMC559 wideband PA is ideal for:...

floor Price/Ceiling Price

Part Number:
HMC559
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2025/3/13

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Product Details

Description



Features:

P1dB Output Power: +28 dBm
Gain: 14 dB
Output IP3: +36 dBm
Supply Voltage: +10V @ 400 mA
50 Ohm Matched Input/Output
3.12 mm x 1.50 mm x 0.1 mm



Application

The HMC559 wideband PA is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics



Specifications

Drain Bias Voltage (Vdd) +11 Vdc
Gate Bias Voltage (Vgg1) -2.0 to 0 Vdc
Gate Bias Voltage (Vgg2) +3V to +5V
RF Input Power (RFin)(Vdd = +10 Vdc) +30 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 55 mW/°C above 85 °C)
5 W
Thermal Resistance
(channel to die bottom)
18 °C/W
Operating Temperature -55 to +85 °C
Storage Temperature -65 to +150 °C
ESD Sensitivity (HBM) Class 1A



Description

The HMC559 is a GaAs MMIC PHEMT Distributed Power Amplifi er die which operates between DC and 20 GHz. The amplifi er provides 14 dB of gain, +36 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring 400 mA from a +10V supply. Gain fl atness is slightly positive from 4 to 20 GHz making the HMC559 ideal for EW, ECM and radar driver amplifi er applications.

The HMC559 amplifi er I/O's are internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.075mm (3 mil) ribbon bonds of minimal length 0.31mm (12 mils).




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