DescriptionThe HMC533LP4(E) are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC533LP4(E) integrate resonators, negative resistance devices, varactor diodes and feature a divide-by-16 output. T he VCO's phase noise performance is excellent over temperature, shock, and process ...
HMC533LP4 / HMC533LP4E: DescriptionThe HMC533LP4(E) are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC533LP4(E) integrate resonators, negative resistance devices, varactor diodes and feature a divide...
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Features: ·360° of Continuous Phase Control·40 dB of Continuous Gain Control·-162 dBm/Hz Output No...
The HMC533LP4(E) are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC533LP4(E) integrate resonators, negative resistance devices, varactor diodes and feature a divide-by-16 output. T he VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +12 dBm typical from a +5V supply voltage. Prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 4x4 mm surface mount package.