DescriptionThe HMC532LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 7.1 to 7.9 GHz, the VCO's phase noise performance is excellent over temperature, shock and vibration...
HMC532LP4 / HMC532LP4E: DescriptionThe HMC532LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: ·360° of Continuous Phase Control·40 dB of Continuous Gain Control·-162 dBm/Hz Output No...
The HMC532LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 7.1 to 7.9 GHz, the VCO's phase noise performance is excellent over temperature, shock and vibration due to the oscillator's monolithic structure. Power output is +14 dBm typical from a single supply of +3V @ 85 mA. The HMC532LP4(E) voltage controlled oscillator is packaged in a leadless QFN 4x4 mm surface mount package.