Features: ·Noise Figure: 3.0 dB·Gain: 15 dB·OIP3: 23 dBm·Single Supply: +3V @ 65 mA·50 Ohm Matched Input/OutputApplicationThe HMC518 is ideal for use as a LNA or driver amplii er for:·Point-to-Point Radios·Point-to-Multi-Point Radios & VSAT·Test Equipment and Sensors·Military & SpaceSpecif...
HMC518: Features: ·Noise Figure: 3.0 dB·Gain: 15 dB·OIP3: 23 dBm·Single Supply: +3V @ 65 mA·50 Ohm Matched Input/OutputApplicationThe HMC518 is ideal for use as a LNA or driver amplii er for:·Point-to-Point...
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Features: ·360° of Continuous Phase Control·40 dB of Continuous Gain Control·-162 dBm/Hz Output No...
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) | +5.5 Vdc |
RF Input Power (RFin)(Vdd = +3.0 Vdc) | +7 dBm |
Junction Temperature | 175 |
Continuous Pdiss (T=85 ) (derate 29mW/C above 85 ) |
2.65 W |
Thermal Resistance (junction to ground paddle) |
34 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -55 to +85 |
ESD Sensitivity (HBM) | Class 1A |
The HMC518 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplii er (LNA) which covers the 20 to 32 GHhz frequency range. The HMC518 provides 15 dB of small signal gain, 3.0 dB of noise i gure and has an output IP3 greater than 23 dBm. The chip can easily be integrated into hybrid or MCM assemblies due to its small size. All data is tested ith the chip in a 50 Ohm test i xture connected via 0.075mm (3 mil) ribbon bonds of minimal length 0.31 mm (12 mil). o .025 mm (1 mil) diameter bondwires may also be used to make the RFIN and RFOUT connections.