Features: ·Noise Figure: 1.8 dB·Gain: 20 dB·OIP3: +20 dBm·Single Supply: 3V @ 65 mA·50 Ohm Matched Input/OutputApplicationThe HMC516 is ideal for use as a LNA or driver amplii er for:·Point-to-Point Radios·Point-to-Multi-Point Radios & VSAT·Test Equipment and Sensors·Military & SpaceSpecif...
HMC516: Features: ·Noise Figure: 1.8 dB·Gain: 20 dB·OIP3: +20 dBm·Single Supply: 3V @ 65 mA·50 Ohm Matched Input/OutputApplicationThe HMC516 is ideal for use as a LNA or driver amplii er for:·Point-to-Point...
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Features: ·360° of Continuous Phase Control·40 dB of Continuous Gain Control·-162 dBm/Hz Output No...
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) | +4 Vdc |
RF Input Power (RFin)(Vdd = +3.0 Vdc) | +5 dBm |
Channel Temperature | 175 |
Continuous Pdiss (T=85 ) (derate 14 mW/ above 85 ) |
1.25 W |
Thermal Resistance (junction to ground paddle) |
71 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -55to +85 |
ESD Sensitivity (HBM) | Class 1A |
The HMC516 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplii er (LNA) which covers the 7 to 17 GHz cy range. The HMC516 provides 20 dB of small signal gain, 1.8 dB of noise i gure and has an output IP3 greater than +20 dBm. The chip can easily be integrated into hybrid or MCM assemblies due to its small size. All data is tested with the ip in a 50 Ohm test i xture connected via0.075mm (3 mil) ribbon bonds of minimal length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter bondwires may also be used to make the RFIN and RFOUT connections.