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HMC510LP5

Features: ·Dual Output: Fo = 8.45 - 9.55 GHz Fo/2 = 4.225 - 4.775 GHz·Pout: +13 dBm·Phase Noise: -116 dBc/Hz @100 kHz Typ.·No External Resonator Needed·QFN Leadless SMT Package, 25 mm2ApplicationLow noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for:·Point to Point/Multipoint Radio·Test Equi...

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HMC510LP5: Features: ·Dual Output: Fo = 8.45 - 9.55 GHz Fo/2 = 4.225 - 4.775 GHz·Pout: +13 dBm·Phase Noise: -116 dBc/Hz @100 kHz Typ.·No External Resonator Needed·QFN Leadless SMT Package, 25 mm2ApplicationLow...

HMC510LP5 Data Sheet

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Part Number:
HMC510LP5
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Dual Output: Fo = 8.45 - 9.55 GHz
        Fo/2 = 4.225 - 4.775 GHz
·Pout: +13 dBm
·Phase Noise: -116 dBc/Hz @100 kHz Typ.
·No External Resonator Needed
·QFN Leadless SMT Package, 25 mm2



Application

Low noise MMIC VCO w/Half Frequency, Divide-by-4
Outputs for:
·Point to Point/Multipoint Radio
·Test Equipment & Industrial Controls
·SATCOM
·Military End-Use


Specifications

Vcc(Dig), Vcc(Amp), Vcc(RF) +5.5 Vdc
Vtune 0 to +15V
Junction Temperature 135
Continuous Pdiss (T=85
(derate 43.5 mW/C above 85 		2.17 W
Thermal Resistance
(junction to ground paddle)		 23 /W
Storage Temperature -65 to +150
Operating Temperature -40 to +85
ESD Sensitivity (HBM) Class 1A



Description

The HMC510LP5 & HMC510LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC510LP5 & HMC510LP5E integrate resona-tors, negative resistance devices, varactor diodes and feature half frequency and ivide--4 outputs. The VCOs phase noise performance is excellent ovetemperature, shock, and process due to the rsmonolithic structure. Power output is +13 dBm typical from a +5V supply voltage. The prescaler and RF/2  functions can disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 m mount , requires no external matching components.




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