DescriptionThe HMC506LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 7.8 to 8.7 GHz, the VCO's phase noise performance is excellent over temperature, shock and vibration...
HMC506LP4 / HMC506LP4E: DescriptionThe HMC506LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering ...
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Features: ·360° of Continuous Phase Control·40 dB of Continuous Gain Control·-162 dBm/Hz Output No...
The HMC506LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 7.8 to 8.7 GHz, the VCO's phase noise performance is excellent over temperature, shock and vibration due to the oscillator's monolithic structure. Power output is +14 dBm typical from a single supply of +3V @ 77 mA. The HMC506LP4(E) voltage controlled oscillator is packaged in a leadless QFN 4x4 mm surface mount package.