HMC480ST89

Features: ·P1dB Output Power: +19 dBm to 2.5 GHz·Gain: 19 dB @ 1 GHz 16 dB @ 2 GHz·+34 dBm Output IP3·Single Supply: +6V to +8V·Industry Standard SOT89 PackageApplication•The HMC480ST89 is an ideal RF/IF gain block & LO or PA driver for:Cellular / PCS / 3GFixed Wireless & WLANCATV, C...

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SeekIC No. : 004364120 Detail

HMC480ST89: Features: ·P1dB Output Power: +19 dBm to 2.5 GHz·Gain: 19 dB @ 1 GHz 16 dB @ 2 GHz·+34 dBm Output IP3·Single Supply: +6V to +8V·Industry Standard SOT89 PackageApplication•The HMC480ST89 is an ...

floor Price/Ceiling Price

Part Number:
HMC480ST89
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/12/21

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Product Details

Description



Features:

·P1dB Output Power: +19 dBm to 2.5 GHz
·Gain: 19 dB @ 1 GHz
   16 dB @ 2 GHz
·+34 dBm Output IP3
·Single Supply: +6V to +8V
·Industry Standard SOT89 Package



Application

•The HMC480ST89 is an ideal RF/IF gain block & LO or PA driver for:
  Cellular / PCS / 3G
  Fixed Wireless & WLAN
  CATV, Cable Modem & DBS
  Microwave Radio & Test Equipment



Pinout

  Connection Diagram


Specifications

Collector Bias Voltage (Vcc) +6.0 Vdc
RF Input Power (RFin)(Vcc = +5 Vdc) +15 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 8.25 mW/°C above 85 °C)
0.536 W
Thermal Resistance
(junction to ground paddle)
122 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C



Description

The HMC480ST89 is an InGaP HBT Gain Block MMIC SMT amplifi er covering DC to 5 GHz and packaged in an industry standard SOT89. The amplifi er can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +20 dBm P1dB output power for cellular/3G, FWA, CATV, microwave radio and test equipment applications. The HMC480ST89 offers 19 dB of gain with a +34 dBm output IP3 at 1 GHz while requiring only 82 mA from a single positive supply. The HMC480ST89 InGaP gain block offers excellent output IP3 and fl at +19 to +20dBm output power performance through 5 GHz compared to equivalent SiGe based products.




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