HMC479ST89

Features: ·P1dB Output Power: +18 dBm·Gain: 15 dB·Output IP3: +33 dBm·Cascadable 50 Ohm I/Os·Single Supply: +5V to +12V·Industry Standard SOT89 PackageApplication•The HMC479ST89 is an ideal RF/IF gain block & LO or PA driver:Cellular / PCS / 3GFixed Wireless & WLANCATV, Cable Modem &...

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SeekIC No. : 004364119 Detail

HMC479ST89: Features: ·P1dB Output Power: +18 dBm·Gain: 15 dB·Output IP3: +33 dBm·Cascadable 50 Ohm I/Os·Single Supply: +5V to +12V·Industry Standard SOT89 PackageApplication•The HMC479ST89 is an ideal RF...

floor Price/Ceiling Price

Part Number:
HMC479ST89
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/12/21

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Product Details

Description



Features:

·P1dB Output Power: +18 dBm
·Gain: 15 dB
·Output IP3: +33 dBm
·Cascadable 50 Ohm I/Os
·Single Supply: +5V to +12V
·Industry Standard SOT89 Package



Application

•The HMC479ST89 is an ideal RF/IF gain block & LO or PA driver:
  Cellular / PCS / 3G
  Fixed Wireless & WLAN
  CATV, Cable Modem & DBS
  Microwave Radio & Test Equipment



Pinout

  Connection Diagram


Specifications

Collector Bias Voltage (Vcc) +6.0 Vdc
RF Input Power (RFin)(Vcc = +4.2 Vdc) +17 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 14.76 mW/°C above 85 °C)
0.960 W
Thermal Resistance
(junction to ground paddle)
67.6 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C



Description

The HMC479ST89 is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi er covering DC to 5 GHz. Packaged in an industry standard SOT89, the amplifi er can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +20 dBm output power. The HMC479ST89 offers 15 dB of gain with a +33 dBm output IP3 at 850 MHz while requiring only 75 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.




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