HMC478ST89

Features: P1dB Output Power: +18 dBmGain: 22 dBOutput IP3: +33 dBmCascadable 50 Ohm I/OsSingle Supply: +5V to +8VIndustry Standard SOT89 PackageRobust 1,000V ESD, Class 1CIncluded in the HMC-DK001 Designer's KitApplicationThe HMC478ST89 / HMC478ST89E is an ideal RF/IF gain block & LO or PA dri...

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SeekIC No. : 004364117 Detail

HMC478ST89: Features: P1dB Output Power: +18 dBmGain: 22 dBOutput IP3: +33 dBmCascadable 50 Ohm I/OsSingle Supply: +5V to +8VIndustry Standard SOT89 PackageRobust 1,000V ESD, Class 1CIncluded in the HMC-DK001 D...

floor Price/Ceiling Price

Part Number:
HMC478ST89
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

P1dB Output Power: +18 dBm
Gain: 22 dB
Output IP3: +33 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V to +8V
Industry Standard SOT89 Package
Robust 1,000V ESD, Class 1C
Included in the HMC-DK001 Designer's Kit



Application

The HMC478ST89 / HMC478ST89E is an ideal RF/IF gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment



Pinout

  Connection Diagram


Specifications

Collector Bias Voltage (Vcc) +6.0 Vdc
Gate Bias Voltage (Vgg) +5 dBm
Channel Temperature 150
Continuous Pdiss (Ta = 85 )
(derate 3.95 mW/ above 85 )
0.615 W
Thermal Resistance
(junction to ground paddle)
105.6 /W
Storage Temperature -65 to +150
Operating Temperature -55 to +85
ESD Sensitivity (HBM) Class 1C



Description

The HMC478ST89 & HMC478ST89E are SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi ers covering DC to 4 GHz. Packaged in an industry standard SOT89, the amplifi er can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +20 dBm output power. The HMC478ST89 & HMC478ST89E offers 22 dB of gain with a +30 dBm output IP3 at 850 MHz while requiring only 62mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.




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