HMC478MP86

Features: ·P1dB Output Power: +18 dBm·Gain: 22 dB·Output IP3: +32 dBm·Cascadable 50 Ohm I/Os·Single Supply: +5V to +8V·Robust 1,000V ESD, Class 1CApplication•The HMC478MP86 is an ideal RF/IF gain block & LO or PA driver:Cellular / PCS / 3GFixed Wireless & WLANCATV, Cable Modem & ...

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SeekIC No. : 004364115 Detail

HMC478MP86: Features: ·P1dB Output Power: +18 dBm·Gain: 22 dB·Output IP3: +32 dBm·Cascadable 50 Ohm I/Os·Single Supply: +5V to +8V·Robust 1,000V ESD, Class 1CApplication•The HMC478MP86 is an ideal RF/IF g...

floor Price/Ceiling Price

Part Number:
HMC478MP86
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

Rating

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Upload time: 2024/12/21

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Product Details

Description



Features:

·P1dB Output Power: +18 dBm
·Gain: 22 dB
·Output IP3: +32 dBm
·Cascadable 50 Ohm I/Os
·Single Supply: +5V to +8V
·Robust 1,000V ESD, Class 1C



Application

•The HMC478MP86 is an ideal RF/IF gain block & LO or PA driver:
  Cellular / PCS / 3G
  Fixed Wireless & WLAN
  CATV, Cable Modem & DBS
  Microwave Radio & Test Equipment



Pinout

  Connection Diagram


Specifications

Collector Bias Voltage (Vcc) +6.0 Vdc
Collector Bias Current (Icc) 100 mA
RF Input Power (RFin)(Vcc = +4.3 Vdc) +5 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 9 mW/°C above 85 °C)
0.583 W
Thermal Resistance
(junction to lead)
111.5 °C/W
orage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Sensitivity (HBM) Class 1C



Description

The HMC478MP86 is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi er covering DC to 4 GHz. This Micro-P packaged amplifi er can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +20 dBm output power. The HMC478MP86 offers 22 dB of gain with a +32 dBm output IP3 at 850 MHz while requiring only 62 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.




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