Features: ·P1dB Output Power: +22 dBm·Gain: 21.5 dB·Output IP3: +35 dBm·Cascadable 50 Ohm I/Os·Single Supply: +8V to +12V·Industry Standard SOT89 PackageApplicationThe HMC475ST89 / HMC475ST89E is an ideal RF/IF gain block & LO or PA driver:• Cellular / PCS / 3G• Fixed Wireless &...
HMC475ST89E: Features: ·P1dB Output Power: +22 dBm·Gain: 21.5 dB·Output IP3: +35 dBm·Cascadable 50 Ohm I/Os·Single Supply: +8V to +12V·Industry Standard SOT89 PackageApplicationThe HMC475ST89 / HMC475ST89E is an...
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DescriptionThe HMC400MS8(E) is a high dynamic range passive MMIC mixer in plastic surface mount 8 ...
Features: Pout: -7 dBmPhase Noise: -105 dBc/Hz @100 KHz Typ.No External Resonator NeededSingle Sup...
Collector Bias Voltage (Vcc) RF Input Power (RFin)(Vcc = +7.2 Vdc) Junction Temperature |
+8.0 Vdc +17 dBm 150 |
Continuous Pdiss (T = 85 ) (derate 16.86 mW/ above 85 ) |
1.09 W |
Thermal Resistance (junction to lead) |
59.3 /W |
Storage Temperature Operating Temperature |
-65 to +150 -40 to +85 |
The HMC475ST89(E) is a InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi er covering DC to 4.5 GHz. Packaged in an industry standard SOT89, the amplifi er can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +25 dBm output power. The HMC475ST89(E) offers 21.5 dB of gain and +35 dBm output IP3 at 850 MHz while requiring only 110 mA from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.